Hangaia e te wheketere te hoko wera-wera Snubber Mo te Tihi Hiko Hiko - Te karaehe IGBT Snubber hoahoa puri mo nga tono hiko teitei - CRE

Hangaia e te wheketere te hoko-wera Snubber mo te High Powered Thyristor - High-class IGBT Snubber hoahoa puritanga mo nga tono hiko teitei - CRE Whakaaturanga Whakaahua

Whakaahuatanga Poto:

Tukuna he imeera ki a matou Tikiake hei PDF

Taipitopito Hua

Tohu Hua

Ataata e pa ana

Urupare (2)

Ko o maatau whakaurunga pai me te kounga pai o te whakahaere puta noa i nga waahanga katoa o te whakaputa ka taea e maatau te kii i te pai o nga kaihoko mo te katoa.Welding Inverter Dc Hononga Capacitor , Punga Kiriata Mo Abb Inverter , Pūnga hiko, Na reira, ka taea e taatau te whakatau i nga uiui rereke mai i nga kaihoko rereke.Tena koa tirohia to maatau paetukutuku ki te tirotiro i etahi atu korero mai i a maatau hua.

Hangaia e te wheketere te hoko wera-wera Snubber Mo Te Tihi Te Mana Tino - Te hoahoa IGBT Snubber puritanga teitei mo nga tono hiko teitei - CRE Taipitopito:

Raraunga hangarau

Te awhe pāmahana whakahaere	Max.Pamahana whakahaere., Runga, teitei: +105℃ Te pāmahana kāwai o runga: +85℃ Te pāmahana kāwai raro: -40 ℃
awhe kaha	0.1μF～5.6μF
Ngaohiko whakatau	700V.DC～3000V.DC
Cap.tol	±5%(J);±10%(K)
Tuturu ngaohiko	1.5Un DC/10S
Tauwehe tohanga	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Te parenga whakaahuru	C≤0.33μF RS≥15000 MΩ (i20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S(i20℃ 100V.DC 60S)
Tuturu i te au patu	tirohia te papaaarangi
Te mura o te mura	UL94V-0
Te roanga o te oranga	100000h(Un; Θhotspot≤85°C)
Paerewa tohutoro	IEC61071;GB/T17702;

Ripanga whakakitenga

Ngaohiko	Un 700V.DC,Urms400Vac;Us1050V
	Ahu(mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Ngaohiko	Un 1000V.DC,Urms500Vac;Us1500V
	Ahu(mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Ngaohiko	Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Ngaohiko	Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Ngaohiko	Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Ngaohiko	Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Whakaahua taipitopito hua:

Aratohu Hua e Pa ana:

Ko ta matou hiahia ko te nuinga o te wa ki te makona o taatau kaihoko ma te tuku i te kaiwhakarato koura, te utu nui me te kounga pai mo te wheketere i hangaia he wera-hoko Snubber Mo High Powered Thyristor - High-class IGBT Snubber capacitor hoahoa mo nga tono mana teitei - CRE , Ka tukuna e te hua ki te katoa puta noa i te ao, penei: Monaco, Portugal, Montreal, Kei a matou nga kaihoko mai i nga whenua neke atu i te 20, a kua mohiotia to matou ingoa e o matou kaihoko whakahirahira.Ko te whakapainga mutunga kore me te tohe mo te 0% hapa ko a maatau kaupapa here kounga matua e rua.Mena ka hiahia koe ki tetahi mea, kaua e mangere ki te whakapiri mai ki a maatau.

Ko te Tatari Ac e whakamahia ana mo te punaha hiko o te tereina

Dc-Link Capacitor Mo nga Kaihuri Ahumahi

Punga Kiriata Momo maroke

Te wheketere Punga Kiriata

Kaihanga Punga Kiriata

Kaiwhakarato Pūnga Ao

Punga Pupuri Punga Pungao Nui

Igbt Snubber

Umu Waenga Resonant Capacitor

Punga Mana Mo te Hononga Dc

Ehara i te mea ngawari ki te kimi i tetahi kaiwhakarato ngaio me te kawenga i enei wa.Ko te tumanako ka taea e taatau te mahi tahi mo te wa roa.

Na Maxine mai Miami - 2017.06.16 18:23

Ko tenei hinonga i roto i te umanga he kaha, he whakataetae hoki, e anga whakamua ana i nga waa me te whakawhanake pumau, kei te tino koa matou ki te whai waahi ki te mahi tahi!

Na Sara no Belize - 2017.06.25 12:48